Surface Modification and Damage of MeV-Energy Heavy Ion Irradiation on Gold Nanowires

Avoiding preamorphization damage in MeV heavy ion-implanted silicon

Implantation of 1.0 MeV ‘isIn in Si results in secondary-defect formation during subsequent 900 “C annealing if the total number of displaced Si atoms is greater than 1.6~ lOi’/ cm’, achieved with a dose near 1.5 X 10i3/cm2. We demonstrate, though, that higher total In doses can be introduced without forming secondary defects by repetitive subthreshold implants each followed by an anneal to rem...

fabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions

a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...

Emission of organic products from the surface of frozen methane under MeV ion irradiation

IO km layers of CH, freshly condensed onto a cold finger at 10~1.5 K were irradiated with IOk MeV protom and ‘Hc’ ’ ions. The gases emitted during irradiation and successive warming to ambient temperature were monitored by qundrupole mass apectrometry (QMS). C,H, and C?H, were the primary volatile products at low temperatures. They were converted with increasing irradiation time and dose into C...

Electrical isolation of GaN by MeV ion irradiation

Purification/annealing of graphene with 100-MeV Ag ion irradiation

UNLABELLED Studies on interaction of graphene with radiation are important because of nanolithographic processes in graphene-based electronic devices and for space applications. Since the electronic properties of graphene are highly sensitive to the defects and number of layers in graphene sample, it is desirable to develop tools to engineer these two parameters. We report swift heavy ion (SHI)...